Thermal and radiation-enhanced diffusion in Cu3 Au

Y. S. Lee, C. P. Flynn, R. S. Averback

Research output: Contribution to journalArticle

Abstract

Thermal and radiation-enhanced diffusion in thin films of the order-disorder alloy Cu3Au have been analyzed above and below the transition temperature. It is demonstrated that thin films grown by molecular beam epitaxy are uniquely suited for such experiments as the surface provides a dominant and well-characterized sink for migrating defects. The analysis is applied to recent experiments. Quantitative predictions of radiation-enhanced diffusion agree closely with experimental values. Analysis of the tracer-impurity thermal diffusion experiments provide host diffusion coefficients in a temperature regime through the transition temperature which were heretofore unavailable.

Original languageEnglish (US)
Pages (from-to)881-889
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number2
DOIs
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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