Theory for a quantum modulated transistor

Fernando Sols, M. MacUcci, Umberto Ravaioli, Karl Hess

Research output: Contribution to journalArticle

Abstract

We present a theoretical study of semiconductor T-structures which may exhibit transistor action based on quantum interference. The electron transmission through a semiconductor quantum wire can be controlled by an external gate voltage that modifies the penetration of the electron wavefunction in a lateral stub, affecting in this way its interference pattern. The structures are modeled as ideal two-dimensional electron waveguides and a tight-binding Green's function technique is used to compute the electron transmission and reflection coefficients. The calculations show that relatively small changes in the stub length can induce strong variations in the electron transmission across the structure. Operation in the fundamental transverse mode appears to be important for applications. We also show that a bound state of purely geometrical origin nucleates at the intersection between waveguide and stub. The performance of the device can be improved by inserting additional stubs of slightly different lengths. Taking into account the applicable scaling rules, we give estimates of the experimental parameters that optimize the transmission characteristics and speed of operation of the proposed transistor.

Original languageEnglish (US)
Pages (from-to)3892-3906
Number of pages15
JournalJournal of Applied Physics
Volume66
Issue number8
DOIs
StatePublished - Dec 1 1989

Fingerprint

transistors
electrons
waveguides
interference
quantum wires
intersections
Green's functions
penetration
reflectance
scaling
electric potential
coefficients
estimates

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Theory for a quantum modulated transistor. / Sols, Fernando; MacUcci, M.; Ravaioli, Umberto; Hess, Karl.

In: Journal of Applied Physics, Vol. 66, No. 8, 01.12.1989, p. 3892-3906.

Research output: Contribution to journalArticle

Sols, Fernando ; MacUcci, M. ; Ravaioli, Umberto ; Hess, Karl. / Theory for a quantum modulated transistor. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 8. pp. 3892-3906.
@article{e624b549629b4c75a0502c48a165d835,
title = "Theory for a quantum modulated transistor",
abstract = "We present a theoretical study of semiconductor T-structures which may exhibit transistor action based on quantum interference. The electron transmission through a semiconductor quantum wire can be controlled by an external gate voltage that modifies the penetration of the electron wavefunction in a lateral stub, affecting in this way its interference pattern. The structures are modeled as ideal two-dimensional electron waveguides and a tight-binding Green's function technique is used to compute the electron transmission and reflection coefficients. The calculations show that relatively small changes in the stub length can induce strong variations in the electron transmission across the structure. Operation in the fundamental transverse mode appears to be important for applications. We also show that a bound state of purely geometrical origin nucleates at the intersection between waveguide and stub. The performance of the device can be improved by inserting additional stubs of slightly different lengths. Taking into account the applicable scaling rules, we give estimates of the experimental parameters that optimize the transmission characteristics and speed of operation of the proposed transistor.",
author = "Fernando Sols and M. MacUcci and Umberto Ravaioli and Karl Hess",
year = "1989",
month = "12",
day = "1",
doi = "10.1063/1.344032",
language = "English (US)",
volume = "66",
pages = "3892--3906",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Theory for a quantum modulated transistor

AU - Sols, Fernando

AU - MacUcci, M.

AU - Ravaioli, Umberto

AU - Hess, Karl

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We present a theoretical study of semiconductor T-structures which may exhibit transistor action based on quantum interference. The electron transmission through a semiconductor quantum wire can be controlled by an external gate voltage that modifies the penetration of the electron wavefunction in a lateral stub, affecting in this way its interference pattern. The structures are modeled as ideal two-dimensional electron waveguides and a tight-binding Green's function technique is used to compute the electron transmission and reflection coefficients. The calculations show that relatively small changes in the stub length can induce strong variations in the electron transmission across the structure. Operation in the fundamental transverse mode appears to be important for applications. We also show that a bound state of purely geometrical origin nucleates at the intersection between waveguide and stub. The performance of the device can be improved by inserting additional stubs of slightly different lengths. Taking into account the applicable scaling rules, we give estimates of the experimental parameters that optimize the transmission characteristics and speed of operation of the proposed transistor.

AB - We present a theoretical study of semiconductor T-structures which may exhibit transistor action based on quantum interference. The electron transmission through a semiconductor quantum wire can be controlled by an external gate voltage that modifies the penetration of the electron wavefunction in a lateral stub, affecting in this way its interference pattern. The structures are modeled as ideal two-dimensional electron waveguides and a tight-binding Green's function technique is used to compute the electron transmission and reflection coefficients. The calculations show that relatively small changes in the stub length can induce strong variations in the electron transmission across the structure. Operation in the fundamental transverse mode appears to be important for applications. We also show that a bound state of purely geometrical origin nucleates at the intersection between waveguide and stub. The performance of the device can be improved by inserting additional stubs of slightly different lengths. Taking into account the applicable scaling rules, we give estimates of the experimental parameters that optimize the transmission characteristics and speed of operation of the proposed transistor.

UR - http://www.scopus.com/inward/record.url?scp=21544433131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544433131&partnerID=8YFLogxK

U2 - 10.1063/1.344032

DO - 10.1063/1.344032

M3 - Article

AN - SCOPUS:21544433131

VL - 66

SP - 3892

EP - 3906

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -