Theory and practice of "striping" for improved ON/OFF Ratio in carbon nanonet thin film transistors

Ninad Pimparkar, Qing Cao, John A Rogers, Muhammad A. Alam

Research output: Contribution to journalArticle

Abstract

A new technique to reduce the influence of metallic carbon nanotubes (CNTs)-relevant for large-scale integrated circuits based on CNT-nanonet transistors-is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called "striping"; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.

Original languageEnglish (US)
Pages (from-to)167-175
Number of pages9
JournalNano Research
Volume2
Issue number2
DOIs
StatePublished - Apr 27 2009

Fingerprint

Carbon Nanotubes
Carbon films
Thin film transistors
Carbon nanotubes
Transistors
Degradation
Relocation
Integrated circuits
Numerical models
Fabrication

Keywords

  • Carbon nanotube
  • Flexible electronics
  • Nanonet
  • Thin film transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Theory and practice of "striping" for improved ON/OFF Ratio in carbon nanonet thin film transistors. / Pimparkar, Ninad; Cao, Qing; Rogers, John A; Alam, Muhammad A.

In: Nano Research, Vol. 2, No. 2, 27.04.2009, p. 167-175.

Research output: Contribution to journalArticle

Pimparkar, Ninad ; Cao, Qing ; Rogers, John A ; Alam, Muhammad A. / Theory and practice of "striping" for improved ON/OFF Ratio in carbon nanonet thin film transistors. In: Nano Research. 2009 ; Vol. 2, No. 2. pp. 167-175.
@article{4241e080343c45e18fac3ebe88e677da,
title = "Theory and practice of {"}striping{"} for improved ON/OFF Ratio in carbon nanonet thin film transistors",
abstract = "A new technique to reduce the influence of metallic carbon nanotubes (CNTs)-relevant for large-scale integrated circuits based on CNT-nanonet transistors-is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called {"}striping{"}; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.",
keywords = "Carbon nanotube, Flexible electronics, Nanonet, Thin film transistors",
author = "Ninad Pimparkar and Qing Cao and Rogers, {John A} and Alam, {Muhammad A.}",
year = "2009",
month = "4",
day = "27",
doi = "10.1007/s12274-009-9013-z",
language = "English (US)",
volume = "2",
pages = "167--175",
journal = "Nano Research",
issn = "1998-0124",
publisher = "Press of Tsinghua University",
number = "2",

}

TY - JOUR

T1 - Theory and practice of "striping" for improved ON/OFF Ratio in carbon nanonet thin film transistors

AU - Pimparkar, Ninad

AU - Cao, Qing

AU - Rogers, John A

AU - Alam, Muhammad A.

PY - 2009/4/27

Y1 - 2009/4/27

N2 - A new technique to reduce the influence of metallic carbon nanotubes (CNTs)-relevant for large-scale integrated circuits based on CNT-nanonet transistors-is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called "striping"; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.

AB - A new technique to reduce the influence of metallic carbon nanotubes (CNTs)-relevant for large-scale integrated circuits based on CNT-nanonet transistors-is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called "striping"; this allows fabrication of transistors with ON/OFF ratio >1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.

KW - Carbon nanotube

KW - Flexible electronics

KW - Nanonet

KW - Thin film transistors

UR - http://www.scopus.com/inward/record.url?scp=65249132326&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249132326&partnerID=8YFLogxK

U2 - 10.1007/s12274-009-9013-z

DO - 10.1007/s12274-009-9013-z

M3 - Article

AN - SCOPUS:65249132326

VL - 2

SP - 167

EP - 175

JO - Nano Research

JF - Nano Research

SN - 1998-0124

IS - 2

ER -