Theoretical study of electron transport in ZnO

Baozeng Guo, Yongqing Wang, Xiaoping Zong, Rongxia Sun, Dengyuan Song, Umberto Ravaioli, Maritin Staedele

Research output: Contribution to journalArticle

Abstract

The full band Monte Carlo method is used to explore steady-state electron transport and transient electron transport in ZnO. For the steady-state electron transport, the velocity-field characteristics, average energy-field characteristics and electron distributions in energy are presented. An important feature of the velocity-field characteristics is a differential negative resistance effect in steady state electron drift velocity. For the transient electron transport, velocity-distance characteristics and transit time-distance characteristics are reported. In velocity-distance characteristics, the effect of velocity overshoot is found. Relaxation time of electron transfer from lower valleys to higher valleys causes the overshoot effect.

Original languageEnglish (US)
Pages (from-to)723-728
Number of pages6
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume24
Issue number7
StatePublished - Jul 1 2003

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Keywords

  • Differential negative resistance effect
  • Monte Carlo
  • Transport properties
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Guo, B., Wang, Y., Zong, X., Sun, R., Song, D., Ravaioli, U., & Staedele, M. (2003). Theoretical study of electron transport in ZnO. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 24(7), 723-728.