The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, J. S. Harris

Research output: Contribution to journalConference article

Abstract

The temperature behavior of 1.5 μm GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.

Original languageEnglish (US)
Pages (from-to)617-620
Number of pages4
JournalOSA Trends in Optics and Photonics Series
Volume96 A
StatePublished - Jan 1 2004
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO - Washington, DC, United States
Duration: May 17 2004May 19 2004

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers'. Together they form a unique fingerprint.

  • Cite this

    Bank, S. R., Goddard, L. L., Wistey, M. A., Yuen, H. B., & Harris, J. S. (2004). The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers. OSA Trends in Optics and Photonics Series, 96 A, 617-620.