The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

S. R. Bank; L. L. Goddard; M. A. Wistey; H. B. Yuen; J. S. Harris

The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, J. S. Harris

Research output: Contribution to journal › Conference article › peer-review

Abstract

The temperature behavior of 1.5 μm GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.

Original language	English (US)
Pages (from-to)	617-620
Number of pages	4
Journal	OSA Trends in Optics and Photonics Series
Volume	96 A
State	Published - 2004
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, United States Duration: May 17 2004 → May 19 2004

ASJC Scopus subject areas

General Engineering

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@article{a84a04582a504900b68ceace3f9caa6e,

title = "The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers",

abstract = "The temperature behavior of 1.5 μm GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.",

author = "Bank, {S. R.} and Goddard, {L. L.} and Wistey, {M. A.} and Yuen, {H. B.} and Harris, {J. S.}",

year = "2004",

language = "English (US)",

volume = "96 A",

pages = "617--620",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

}

TY - JOUR

T1 - The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

AU - Bank, S. R.

AU - Goddard, L. L.

AU - Wistey, M. A.

AU - Yuen, H. B.

AU - Harris, J. S.

PY - 2004

Y1 - 2004

N2 - The temperature behavior of 1.5 μm GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.

AB - The temperature behavior of 1.5 μm GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.

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UR - http://www.scopus.com/inward/citedby.url?scp=33645232712&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645232712

SN - 1094-5695

VL - 96 A

SP - 617

EP - 620

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

Abstract

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