The science and applications of relaxed semiconductor alloys on conventional substrates

E. A. Fitzgerald, M. E. Groenert, A. Pitera, M. L. Lee, V. Yang, J. A. Carlin, C. W. Leitz, C. L. Andre, S. A. Ringel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation nucleation and threading dislocation propogation, graded composition buffer layers can be used to relieve lattice mismatch and retain surface layers with great perfection. A particularly interesting system is the relaxed Si 1-xGe x/Si system, which can host a variety of high performance CMOS devices as well as allow for the integration of GaAs with Si. Optical links, solar cells, and more recently, continuous wave room temperature lasers have been created on GaAs/Ge/SiGe/Si. Commercialization of relaxed Si 1-xGe x/Si materials will likely occur through the Si CMOS end market, creating a supply of low cost SiGe virtual substrates for other application areas, including solar cells.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages587-592
Number of pages6
StatePublished - Dec 1 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

ASJC Scopus subject areas

  • Engineering(all)

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