@inproceedings{bd41ce29f5e34661b015a042b14cf84e,
title = "The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs Lasers",
abstract = "The role and suppression of electron leakage in developing 1.5 μm GaInNAsSb lasers were examined. It was found both theoretically and experimentally that the bandgap reduction due to introduction of nitrogen into (In,Ga)As manifested itself almost exclusively in the conduction band. It was also found by several groups that growth of GaN 0.025As 0.975 at ∼0.3 μm/hr at 455°C resulted in optically poor materials. Several techniques were proposed to reduce the defect-enhanced electron leakage mechanism including the novel asymmetric quantum well (QW) structure.",
author = "Bank, {S. R.} and Wistey, {M. A.} and Yuen, {H. B.} and Goddard, {L. L.} and Harris, {J. S.}",
year = "2004",
doi = "10.1109/DRC.2004.1367835",
language = "English (US)",
isbn = "0780382846",
series = "Device Research Conference - Conference Digest, DRC",
pages = "158--159",
booktitle = "Device Research Conference - Conference Digest, 62nd DRC",
note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",
}