The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs Lasers

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The role and suppression of electron leakage in developing 1.5 μm GaInNAsSb lasers were examined. It was found both theoretically and experimentally that the bandgap reduction due to introduction of nitrogen into (In,Ga)As manifested itself almost exclusively in the conduction band. It was also found by several groups that growth of GaN 0.025As 0.975 at ∼0.3 μm/hr at 455°C resulted in optically poor materials. Several techniques were proposed to reduce the defect-enhanced electron leakage mechanism including the novel asymmetric quantum well (QW) structure.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages158-159
Number of pages2
DOIs
StatePublished - Dec 1 2004
Externally publishedYes
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
Country/TerritoryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

ASJC Scopus subject areas

  • Engineering(all)

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