Abstract
The development and merits of long wavelength vertical cavity surface emitting laser (VCSEL) was presented. The InGaAsP active regions were combined with AlGaAs/GaAs distributed Bragg reflectors to fabricate wafer bonded VCSEL to meet the requirement of 1300 and 1550 nm wavelength. The operations with InGaAsN quantum well VCSEL were found to be suitable for 1300 nm wavelength and InP-based devices were best suited for 1550 nm range.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 594-595 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 2001 |
| Event | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: Nov 11 2001 → Nov 15 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering