The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot

Edwin C Kan; Umberto Ravaioli; Thomas Kerkhoven

doi:10.1007/978-1-4757-2124-9_8

The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot

Edwin C Kan, Umberto Ravaioli, Thomas Kerkhoven

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Device simulation using the drift-diffusion (DD) model has many advantages over other more complex and time-consuming methods. However, in submi-cron devices, nonstationary effects such as velocity overshoot must be included to predict device behavior accurately. We have successfully used an augmented current equation[I] to analyze submicron device characteristics. Comparisons with the Monte-Carlo (MC) method and the Hydrodynamic (HD) model are briefly examined on a test structure. Also, a hierarchical, easy-to-update DD device simulator OSMOSIS (Over-Shoot Modeling Of Semiconductor Structures) is developed not only for the augmented current equation, but also for more general use in the future.

Original language	English (US)
Title of host publication	Computational Electronics
Subtitle of host publication	Semiconductor Transport and Device Simulation
Editors	K. Hess, J. P. Leburton, U. Ravaioli
Publisher	Springer
Chapter	8
Pages	47-50
ISBN (Electronic)	9781475721249
ISBN (Print)	9781441951229, 9780792390886
DOIs	https://doi.org/10.1007/978-1-4757-2124-9_8
State	Published - 1991

Publication series

Name	The Springer International Series in Engineering and Computer Science
Volume	113
ISSN (Print)	0893-3405

Keywords

Test Structure
Velocity Overshoot
Current Equation
Boltzmann Transport Equation
Computational Electronics

Online availability

10.1007/978-1-4757-2124-9_8

Library availability

Discover UIUC Full Text

1 Book

Computational Electronics: Semiconductor Transport and Device Simulation
Hess, K. (Editor), Leburton, J. P. (Editor) & Ravaioli, U. (Editor), 1991, Boston: Springer. 268 p. (The Springer International Series in Engineering and Computer Science; vol. 113)
Research output: Book/Report/Conference proceeding › Book

Cite this

Kan, E. C., Ravaioli, U., & Kerkhoven, T. (1991). The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot. In K. Hess, J. P. Leburton, & U. Ravaioli (Eds.), Computational Electronics: Semiconductor Transport and Device Simulation (pp. 47-50). (The Springer International Series in Engineering and Computer Science; Vol. 113). Springer. https://doi.org/10.1007/978-1-4757-2124-9_8

The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot. / Kan, Edwin C; Ravaioli, Umberto; Kerkhoven, Thomas.
Computational Electronics: Semiconductor Transport and Device Simulation. ed. / K. Hess; J. P. Leburton; U. Ravaioli. Springer, 1991. p. 47-50 (The Springer International Series in Engineering and Computer Science; Vol. 113).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Kan, EC, Ravaioli, U & Kerkhoven, T 1991, The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot. in K Hess, JP Leburton & U Ravaioli (eds), Computational Electronics: Semiconductor Transport and Device Simulation. The Springer International Series in Engineering and Computer Science, vol. 113, Springer, pp. 47-50. https://doi.org/10.1007/978-1-4757-2124-9_8

Kan EC, Ravaioli U, Kerkhoven T. The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot. In Hess K, Leburton JP, Ravaioli U, editors, Computational Electronics: Semiconductor Transport and Device Simulation. Springer. 1991. p. 47-50. (The Springer International Series in Engineering and Computer Science). doi: 10.1007/978-1-4757-2124-9_8

Kan, Edwin C ; Ravaioli, Umberto ; Kerkhoven, Thomas. / The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot. Computational Electronics: Semiconductor Transport and Device Simulation. editor / K. Hess ; J. P. Leburton ; U. Ravaioli. Springer, 1991. pp. 47-50 (The Springer International Series in Engineering and Computer Science).

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AB - Device simulation using the drift-diffusion (DD) model has many advantages over other more complex and time-consuming methods. However, in submi-cron devices, nonstationary effects such as velocity overshoot must be included to predict device behavior accurately. We have successfully used an augmented current equation[I] to analyze submicron device characteristics. Comparisons with the Monte-Carlo (MC) method and the Hydrodynamic (HD) model are briefly examined on a test structure. Also, a hierarchical, easy-to-update DD device simulator OSMOSIS (Over-Shoot Modeling Of Semiconductor Structures) is developed not only for the augmented current equation, but also for more general use in the future.

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The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot

Abstract

Publication series

Keywords

Online availability

Library availability

Fingerprint

Research output

Computational Electronics: Semiconductor Transport and Device Simulation

Cite this