The plasma bipolar junction phototransistor: Coupling electron-hole and electron-ion plasmas

Benben Li, Thomas Houlahan, Clark J. Wagner, Paul A. Tchertchian, Dane J. Sievers, J. Gary Eden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Coupling semiconductor (e --h +) and gas phase plasmas with a strong electric field yields a transistor exhibiting photosensitivity and voltage gain but also a light-emitting collector whose radiative output can be switched and modulated.

Original languageEnglish (US)
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages15-16
Number of pages2
DOIs
StatePublished - 2011
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: Oct 9 2011Oct 13 2011

Publication series

NameIEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period10/9/1110/13/11

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Li, B., Houlahan, T., Wagner, C. J., Tchertchian, P. A., Sievers, D. J., & Eden, J. G. (2011). The plasma bipolar junction phototransistor: Coupling electron-hole and electron-ion plasmas. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 15-16). [6110402] (IEEE Photonic Society 24th Annual Meeting, PHO 2011). https://doi.org/10.1109/PHO.2011.6110402