The physics of determining chip reliability

Keyphrases

• Statistical Model 100%
• Chip Reliability 100%
• MOSFET 66%
• Deep Submicron 66%
• Degradation Mechanism 66%
• Activation Energy 33%
• Time Dependence 33%
• Physics-based 33%
• Defect Generation 33%
• Deep Submicron Technology 33%
• Device Degradation 33%
• Nanometer chip 33%
• Latent Failures 33%
• Intrinsic Failures 33%
• Defect Activation 33%
• Chip Technology 33%

Engineering

• Defects 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Degradation Mechanism 100%
• Statistical Model 100%
• Nanometre 50%
• Activation Energy 50%
• Experimental Time 50%
• Physical Basis 50%
• Test Subject 50%

Earth and Planetary Sciences

• CMOS 100%
• Time Dependence 100%
• Activation Energy 100%