A physics-based statistics model was discussed for degradation mechanisms in deep-submicron CMOS technology. The model provided a physical basis for intrinsic failures in nanometer chip technology and observed experimental time-dependence of device-degradation mechanisms. The reliability of deep-submicron MOSFETs was determined by the statistical model and short-time tests subject to the linkage of defect generation statistics to variations in defect activation energies. The results depicted the follow up of enhanced latent failures from the statistical model for deep-submicron MOSFETs.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering