The need for transient I-V measurement of device ESD response

Kuo Hsuan Meng, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
StatePublished - Nov 27 2012
Event34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 - Tucson, AZ, United States
Duration: Sep 9 2012Sep 14 2012

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
Country/TerritoryUnited States
CityTucson, AZ
Period9/9/129/14/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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