TY - GEN
T1 - The need for transient I-V measurement of device ESD response
AU - Meng, Kuo Hsuan
AU - Rosenbaum, Elyse
PY - 2012
Y1 - 2012
N2 - Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.
AB - Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.
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M3 - Conference contribution
AN - SCOPUS:84869830692
SN - 1585372188
SN - 9781585372188
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
T2 - 34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
Y2 - 9 September 2012 through 14 September 2012
ER -