Abstract
The reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x<y<0.25) were observed for the in-situ annealing. Different annealing time is identified as the mechanism responsible for the formation of the various phases.
Original language | English (US) |
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Pages (from-to) | 151-155 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 462-463 |
Issue number | SPEC. ISS. |
DOIs | |
State | Published - Sep 2004 |
Externally published | Yes |
Keywords
- In-situ annealing
- Ni germanide
- Ni germanosilicide
- Ni silicide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry