The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

L. J. Jin, K. L. Pey, W. K. Choi, E. A. Fitzgerald, D. A. Antoniadis, A. J. Pitera, M. L. Lee, D. Z. Chi, C. H. Tung

Research output: Contribution to journalArticlepeer-review


The reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x<y<0.25) were observed for the in-situ annealing. Different annealing time is identified as the mechanism responsible for the formation of the various phases.

Original languageEnglish (US)
Pages (from-to)151-155
Number of pages5
JournalThin Solid Films
Issue numberSPEC. ISS.
StatePublished - Sep 2004
Externally publishedYes


  • In-situ annealing
  • Ni germanide
  • Ni germanosilicide
  • Ni silicide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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