The influence of X-ray irradiation on structural relaxation and crystallization of amorphous silicon films

Shunsuke Muto, Yumiko Kobayashi, Kin Man Yu, Wladyslaw Walukiewicz, Charles J. Echer, Scott McCormick, John R. Abelson

Research output: Contribution to journalArticle

Abstract

The effect of intense X-ray irradiation on the short range structure and the thermal crystallization process in sputter deposited amorphous silicon films has been examined by extended energy-loss fine structure spectroscopy and transmission electron microscopy The coordination number and the mean square disorder of the first neighbor shell in the amorphous state were increased following X-ray irradiation. The crystallization by post-annealing was delayed, the crystallized particles were dispersed homogeneously throughout the film, and the size of the individual particles was larger than in samples without X-ray irradiation. The above facts suggest that the number of unsaturated bonds is reduced by the X-ray irradiation, which can suppress the atomic diffusion and rearrangement, necessary for the crystallization.

Original languageEnglish (US)
Pages (from-to)5890-5893
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number11
DOIs
StatePublished - Nov 1998

Keywords

  • Amorphous silicon
  • Extended energy-loss fine structure
  • Short range structure
  • Thermal crystallization
  • Transmission electron microscopy
  • X-ray irradiation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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