Abstract
In experiments on the LPE growth of InGaAsP on (100) -InP substrates, it has been found that constant-composition epitaxial layers can be grown at constant temperature using the step-cooling technique, while the equilibrium-cooling, supercooling, and two-phase-solution techniques which involve growth under changing temperatures all result in grading of the alloy composition. The lattice constants and energy gaps of epitaxial layers grown using the step-cooling technique are independent of the amount of step cooling but are dependent on the growth temperature.
Original language | English (US) |
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Pages (from-to) | 292-295 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 34 |
Issue number | 4 |
DOIs | |
State | Published - 1979 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)