The influence of LPE growth techniques on the alloy composition of InGaAsP

Milton Feng, L. W. Cook, M. M. Tashima, T. H. Windhorn, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

In experiments on the LPE growth of InGaAsP on (100) -InP substrates, it has been found that constant-composition epitaxial layers can be grown at constant temperature using the step-cooling technique, while the equilibrium-cooling, supercooling, and two-phase-solution techniques which involve growth under changing temperatures all result in grading of the alloy composition. The lattice constants and energy gaps of epitaxial layers grown using the step-cooling technique are independent of the amount of step cooling but are dependent on the growth temperature.

Original languageEnglish (US)
Pages (from-to)292-295
Number of pages4
JournalApplied Physics Letters
Volume34
Issue number4
DOIs
StatePublished - Dec 1 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Feng, M., Cook, L. W., Tashima, M. M., Windhorn, T. H., & Stillman, G. E. (1979). The influence of LPE growth techniques on the alloy composition of InGaAsP. Applied Physics Letters, 34(4), 292-295. https://doi.org/10.1063/1.90764