The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng; M. M. Tashima; L. W. Cook; R. A. Milano; G. E. Stillman

doi:10.1063/1.90571

The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng, M. M. Tashima, L. W. Cook, R. A. Milano, G. E. Stillman

Electrical and Computer Engineering

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Abstract

In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In_0.95707Ga _0.0040As_0.0353P_0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

Original language	English (US)
Pages (from-to)	91-93
Number of pages	3
Journal	Applied Physics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1063/1.90571
State	Published - 1979

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Physics and Astronomy (miscellaneous)

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title = "The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP",

abstract = "In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.",

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AU - Feng, M.

AU - Tashima, M. M.

AU - Cook, L. W.

AU - Milano, R. A.

AU - Stillman, G. E.

PY - 1979

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N2 - In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

AB - In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

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The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

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