Abstract
In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 91-93 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 34 |
| Issue number | 1 |
| DOIs | |
| State | Published - Dec 1 1979 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Feng, M., Tashima, M. M., Cook, L. W., Milano, R. A., & Stillman, G. E. (1979). The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP. Applied Physics Letters, 34(1), 91-93. https://doi.org/10.1063/1.90571