The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng; M. M. Tashima; L. W. Cook; R. A. Milano; G. E. Stillman

doi:10.1063/1.90571

The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng, M. M. Tashima, L. W. Cook, R. A. Milano, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In_0.95707Ga _0.0040As_0.0353P_0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

Original language	English (US)
Pages (from-to)	91-93
Number of pages	3
Journal	Applied Physics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1063/1.90571
State	Published - 1979

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.90571

Fingerprint Dive into the research topics of 'The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP'. Together they form a unique fingerprint.

Cite this

@article{05cac485323d484ca31a85b70251f0ff,

title = "The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP",

abstract = "In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.",

author = "M. Feng and Tashima, {M. M.} and Cook, {L. W.} and Milano, {R. A.} and Stillman, {G. E.}",

year = "1979",

doi = "10.1063/1.90571",

language = "English (US)",

volume = "34",

pages = "91--93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

AU - Feng, M.

AU - Tashima, M. M.

AU - Cook, L. W.

AU - Milano, R. A.

AU - Stillman, G. E.

PY - 1979

Y1 - 1979

N2 - In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

AB - In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

UR - http://www.scopus.com/inward/record.url?scp=36749115209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749115209&partnerID=8YFLogxK

U2 - 10.1063/1.90571

DO - 10.1063/1.90571

M3 - Article

AN - SCOPUS:36749115209

VL - 34

SP - 91

EP - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -

The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this