The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng, M. M. Tashima, L. W. Cook, R. A. Milano, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

Original languageEnglish (US)
Pages (from-to)91-93
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number1
DOIs
StatePublished - Dec 1 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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