The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng, M. M. Tashima, L. W. Cook, R. A. Milano, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

Original languageEnglish (US)
Pages (from-to)91-93
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number1
DOIs
StatePublished - Dec 1 1979

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coefficients
liquid phase epitaxy
x ray diffraction
impurities
causes
electrons

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  • Physics and Astronomy (miscellaneous)

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The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP. / Feng, M.; Tashima, M. M.; Cook, L. W.; Milano, R. A.; Stillman, G. E.

In: Applied Physics Letters, Vol. 34, No. 1, 01.12.1979, p. 91-93.

Research output: Contribution to journalArticle

Feng, M. ; Tashima, M. M. ; Cook, L. W. ; Milano, R. A. ; Stillman, G. E. / The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP. In: Applied Physics Letters. 1979 ; Vol. 34, No. 1. pp. 91-93.
@article{05cac485323d484ca31a85b70251f0ff,
title = "The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP",
abstract = "In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.",
author = "M. Feng and Tashima, {M. M.} and Cook, {L. W.} and Milano, {R. A.} and Stillman, {G. E.}",
year = "1979",
month = "12",
day = "1",
doi = "10.1063/1.90571",
language = "English (US)",
volume = "34",
pages = "91--93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP

AU - Feng, M.

AU - Tashima, M. M.

AU - Cook, L. W.

AU - Milano, R. A.

AU - Stillman, G. E.

PY - 1979/12/1

Y1 - 1979/12/1

N2 - In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

AB - In experiments on the growth of InGaAsP alloys by liquid-phase epitaxy on (100) -InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga 0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x-ray diffraction, and the energy gaps were estimated from transmission measurements.

UR - http://www.scopus.com/inward/record.url?scp=36749115209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749115209&partnerID=8YFLogxK

U2 - 10.1063/1.90571

DO - 10.1063/1.90571

M3 - Article

AN - SCOPUS:36749115209

VL - 34

SP - 91

EP - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -