TY - JOUR
T1 - The influence of fabrication governed surface conditions on the mechanical strength of thin film materials
AU - Chasiotis, Ioannis
AU - Knauss, Wolfgang G.
N1 - Funding Information:
The authors gratefully acknowledge the support by the Airforce Office of Scientific Research through grant F49629-97-1-0324 (Round Robin Program), and under grant F49620-99-1-0091, with Major Brian Sanders, Drs. O. Ochoa, D. Segalman and T. Hahn as the monitors.
PY - 2001
Y1 - 2001
N2 - The mechanical strength of thin polysilicon films has been examined in connection with exposure to Hydrofluoric Acid (HF). It is found that surface roughness as characterized by groove formation at grain boundaries depends on the HF release time. Surface undulations and crevasses related to grain structure result in reduced fracture strength and induced errors into the effective elastic modulus measurements - especially when the latter is determined from flexure configurations. Extensive exposure to HF results in material degradation, as evidenced by a transition from a transgranular to an intergranular failure manner and a corresponding drastic drop of the film strength with attendant increase of porosity.
AB - The mechanical strength of thin polysilicon films has been examined in connection with exposure to Hydrofluoric Acid (HF). It is found that surface roughness as characterized by groove formation at grain boundaries depends on the HF release time. Surface undulations and crevasses related to grain structure result in reduced fracture strength and induced errors into the effective elastic modulus measurements - especially when the latter is determined from flexure configurations. Extensive exposure to HF results in material degradation, as evidenced by a transition from a transgranular to an intergranular failure manner and a corresponding drastic drop of the film strength with attendant increase of porosity.
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M3 - Conference article
AN - SCOPUS:0035557132
SN - 0272-9172
VL - 657
SP - EE221-EE226
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Material Science of Microelectromechanical Systems (MEMS) Devices III
Y2 - 27 November 2000 through 28 November 2000
ER -