The influence of Cu-Nb interfaces on local vacancy concentrations in Cu

Research output: Contribution to journalArticlepeer-review

Abstract

The sink strength of Cu-Nb interfaces was investigated by measuring the steady-state vacancy concentration profile adjacent to Cu-Nb interfaces during 1.8 MeV Kr+ irradiation. Broadening of dilute nanoscale Au tracer layers in Cu quantified position-dependent values for radiation-enhanced diffusivity and, accordingly, vacancy concentration. The measured vacancy profile corresponds to results calculated from a steady-state kinetic rate equation that assumes perfect sink efficiency at the Cu-Nb interface, indicating that it behaves like an ideal sink for vacancies in Cu.

Original languageEnglish (US)
Pages (from-to)21-24
Number of pages4
JournalScripta Materialia
Volume69
Issue number1
DOIs
StatePublished - Jul 2013

Keywords

  • Diffusion
  • Interfaces
  • Point defects
  • Vacancies

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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