Abstract
The sink strength of Cu-Nb interfaces was investigated by measuring the steady-state vacancy concentration profile adjacent to Cu-Nb interfaces during 1.8 MeV Kr+ irradiation. Broadening of dilute nanoscale Au tracer layers in Cu quantified position-dependent values for radiation-enhanced diffusivity and, accordingly, vacancy concentration. The measured vacancy profile corresponds to results calculated from a steady-state kinetic rate equation that assumes perfect sink efficiency at the Cu-Nb interface, indicating that it behaves like an ideal sink for vacancies in Cu.
Original language | English (US) |
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Pages (from-to) | 21-24 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 69 |
Issue number | 1 |
DOIs | |
State | Published - Jul 2013 |
Keywords
- Diffusion
- Interfaces
- Point defects
- Vacancies
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics