The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

X. Li, S. Kim, E. E. Reuter, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak.

Original languageEnglish (US)
Pages (from-to)1990-1992
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number16
DOIs
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'The incorporation of arsenic in GaN by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this