The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance

Hui Chan Seo, Seung Jae Hong, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve very low ohmic contact resistance, n+-GaN layer was selectively deposited using plasma assisted molecular beam epitaxy. During this process polycrystalline GaN grew on the patterned SiO2 region which was subsequently removed by a heated KOH solution, resulting in damage on the n+-GaN surface. To prevent this damage, an additional SiO2 layer was selectively deposited only on the n+-GaN region, producing a specific contact resistance (4.59 × 10-7 Ω · cm2) much lower than that with the KOH etching damage (4.92 ∼ 23.7 × 10-6 Ω · cm2). Each of KOH etching included large pits (4.08 × 108 cm-2) and degraded current transport.

Original languageEnglish (US)
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages416-417
Number of pages2
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: Oct 22 2006Oct 25 2006

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period10/22/0610/25/06

Keywords

  • Component
  • GaN
  • Ohmic contacts
  • PA-MBE
  • Selective area growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Seo, H. C., Hong, S. J., & Kim, K. (2006). The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 416-417). [4388794] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388794