The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance

Hui Chan Seo, Seung Jae Hong, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve very low ohmic contact resistance, n+-GaN layer was selectively deposited using plasma assisted molecular beam epitaxy. During this process polycrystalline GaN grew on the patterned SiO2 region which was subsequently removed by a heated KOH solution, resulting in damage on the n+-GaN surface. To prevent this damage, an additional SiO2 layer was selectively deposited only on the n+-GaN region, producing a specific contact resistance (4.59 × 10-7 Ω · cm2) much lower than that with the KOH etching damage (4.92 ∼ 23.7 × 10-6 Ω · cm2). Each of KOH etching included large pits (4.08 × 108 cm-2) and degraded current transport.

Original languageEnglish (US)
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages416-417
Number of pages2
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: Oct 22 2006Oct 25 2006

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period10/22/0610/25/06

Fingerprint

Ohmic contacts
Contact resistance
Molecular beam epitaxy
Etching
Plasmas

Keywords

  • Component
  • GaN
  • Ohmic contacts
  • PA-MBE
  • Selective area growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Seo, H. C., Hong, S. J., & Kim, K. (2006). The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 416-417). [4388794] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388794

The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance. / Seo, Hui Chan; Hong, Seung Jae; Kim, Kyekyoon.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 416-417 4388794 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seo, HC, Hong, SJ & Kim, K 2006, The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388794, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 416-417, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 10/22/06. https://doi.org/10.1109/NMDC.2006.4388794
Seo HC, Hong SJ, Kim K. The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 416-417. 4388794. (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC). https://doi.org/10.1109/NMDC.2006.4388794
Seo, Hui Chan ; Hong, Seung Jae ; Kim, Kyekyoon. / The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. pp. 416-417 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC).
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