We report the electronic properties, stability, and microstructure of a-Si:H films grown at high substrate temperature (320-440°C) by dc reactive magnetron sputtering. The initial defect state density, determined by the constant photocurrent method, varies from 2-5×1015 cm -3 with H content changing from 15-10 at. % as Ts increases from 320-375°C. For 100 h of white light exposure at 1 W/cm 2, the midgap state density reached an apparent saturation at 2-3×1016 cm-3 over this temperature range. By contrast, films grown at 230-300°C saturate at 9×1016 cm-3.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Applied Physics|
|State||Published - 1994|
ASJC Scopus subject areas
- Physics and Astronomy(all)