The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature

Y. H. Liang, N. Maley, John R Abelson

Research output: Contribution to journalArticle

Abstract

We report the electronic properties, stability, and microstructure of a-Si:H films grown at high substrate temperature (320-440°C) by dc reactive magnetron sputtering. The initial defect state density, determined by the constant photocurrent method, varies from 2-5×1015 cm -3 with H content changing from 15-10 at. % as Ts increases from 320-375°C. For 100 h of white light exposure at 1 W/cm 2, the midgap state density reached an apparent saturation at 2-3×1016 cm-3 over this temperature range. By contrast, films grown at 230-300°C saturate at 9×1016 cm-3.

Original languageEnglish (US)
Pages (from-to)3704-3706
Number of pages3
JournalJournal of Applied Physics
Volume75
Issue number7
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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