@inproceedings{02daf011e2d741e9a7755207331fab6e,
title = "The impact of InAlAs spacer layer on DC characteristics of InP/InAlAs/GaAsSb/InP DHBTs",
abstract = "GaAsSb-based double heterojunction bipolar transistors (DHBTs) were fabricated and their dc performances were characterized. The device heterostructures in this study incorporated thin InAlAs spacer layer between GaAsSb base layer and InP emitter layer. The impact of the thin InALAs spacer layer on the dc performance of GaAsSb-based DHBTs were investigated by comparing the dc characteristics of devices fabricated on InP/InALAs/GaAsSb/InP and conventional InP/ GaAsSb/InP heterostructures.",
author = "Cho, {S. W.} and Park, {M. S.} and Kim, {T. W.} and Jang, {J. H.} and I. Adesida and N. Pan",
year = "2005",
language = "English (US)",
isbn = "1424400848",
series = "2005 International Semiconductor Device Research Symposium",
pages = "394--395",
booktitle = "2005 International Semiconductor Device Research Symposium",
note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",
}