The future of two-dimensional semiconductors beyond Moore’s law

Ki Seok Kim, Junyoung Kwon, Huije Ryu, Changhyun Kim, Hyunseok Kim, Eun Kyu Lee, Doyoon Lee, Seunghwan Seo, Ne Myo Han, Jun Min Suh, Jekyung Kim, Min Kyu Song, Sangho Lee, Minsu Seol, Jeehwan Kim

Research output: Contribution to journalReview articlepeer-review

Abstract

The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.

Original languageEnglish (US)
Pages (from-to)895-906
Number of pages12
JournalNature Nanotechnology
Volume19
Issue number7
DOIs
StatePublished - Jul 2024
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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