The fabrication of large-area, free-standing GaN by a novel nanoetching process

Yu Zhang; Qian Sun; Benjamin Leung; John Simon; Minjoo Larry Lee; Jung Han

doi:10.1088/0957-4484/22/4/045603

The fabrication of large-area, free-standing GaN by a novel nanoetching process

Yu Zhang, Qian Sun, Benjamin Leung, John Simon, Minjoo Larry Lee, Jung Han

Research output: Contribution to journal › Article › peer-review

Abstract

A simple yet versatile nanoetching process in porosifying and 'machining' GaN is reported in this work. By combining different porosifying conditions through potentiostatic modulation or embedding doping design, we are able to separate and lift off GaN layers over a macroscopic area (≤cm²). Strain relaxation and single crystallinity are confirmed by Raman and transmission electron microscopy, respectively. This method is expected to open up a new dimension in epitaxy, design and manufacture of GaN heterostructures and devices.

Original language	English (US)
Article number	045603
Journal	Nanotechnology
Volume	22
Issue number	4
DOIs	https://doi.org/10.1088/0957-4484/22/4/045603
State	Published - Jan 28 2011
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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