The fabrication of large-area, free-standing GaN by a novel nanoetching process

Yu Zhang, Qian Sun, Benjamin Leung, John Simon, Minjoo Larry Lee, Jung Han

Research output: Contribution to journalArticlepeer-review

Abstract

A simple yet versatile nanoetching process in porosifying and 'machining' GaN is reported in this work. By combining different porosifying conditions through potentiostatic modulation or embedding doping design, we are able to separate and lift off GaN layers over a macroscopic area (≤cm2). Strain relaxation and single crystallinity are confirmed by Raman and transmission electron microscopy, respectively. This method is expected to open up a new dimension in epitaxy, design and manufacture of GaN heterostructures and devices.

Original languageEnglish (US)
Article number045603
JournalNanotechnology
Volume22
Issue number4
DOIs
StatePublished - Jan 28 2011
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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