The electronic structures of in-rich InGaN quantum well

Pilkyung Moon, Hee Jin Kim, Soon Yong Kwon, Euijoon Yoon, Seoung Hwan Park, Jean-Pierre Leburton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k·p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages391-392
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

Keywords

  • In-rich InGaN quantum well
  • Kp method
  • Piezoelectric effect
  • Strain relaxation
  • Valence band offset

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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