@inproceedings{6c771d18f2c14f5896fb807cc7d82ae6,
title = "The electronic structures of in-rich InGaN quantum well",
abstract = "We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k·p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result.",
keywords = "In-rich InGaN quantum well, Kp method, Piezoelectric effect, Strain relaxation, Valence band offset",
author = "Pilkyung Moon and Kim, {Hee Jin} and Kwon, {Soon Yong} and Euijoon Yoon and Park, {Seoung Hwan} and Leburton, {Jean Pierre}",
year = "2007",
doi = "10.1063/1.2729930",
language = "English (US)",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "391--392",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}