The effects of temperature jump on CVD modeling

Tailai Hu, Nick G. Glumac

Research output: Contribution to journalArticlepeer-review


Full Paper: The effects of a temperature jump at the growth surface in stagnation flow CVD reactors are investigated for Si, SiC, and GaAs depositions where surface temperature jumps are predicted to occur, causing changes in the near-surface concentrations of some key species. The predicted changes in surface flux, gas phase species concentrations, and surface reaction rates are estimated. The impact of such a temperature discontinuity on CVD modeling in general is discussed together with other factors that might counteract the outcome of such a near-surface temperature slip.

Original languageEnglish (US)
Pages (from-to)205-212+1184
JournalAdvanced Materials
Issue number17
StatePublished - Sep 3 2002


  • Gallium arsenide
  • Growth mechanisms
  • Modeling methods
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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