Abstract
In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.
Original language | English (US) |
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Pages (from-to) | 785-789 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 51 |
Issue number | 5 |
DOIs | |
State | Published - May 2004 |
Externally published | Yes |
Keywords
- Field-effect transistors (FET)
- Gallium nitride
- Microwave power
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering