The effects of ion implantation on the microstructure of CuInSe2 single crystals

C. A. Mullan; C. J. Kiely; M. V. Yakushev; M. Imanieh; R. D. Tomlinson; A. Rockett

doi:10.1080/01418619608243709

The effects of ion implantation on the microstructure of CuInSe₂ single crystals

C. A. Mullan, C. J. Kiely, M. V. Yakushev, M. Imanieh, R. D. Tomlinson, A. Rockett

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The implantation of single-crystal CuInSe₂ with O ions is known to cause an n-to p-type carrier conversion and a strong enhancement in photoconductive response. In this paper, we present the first microstructural investigation of O and Xe ion implant damage in CuInSe₂ as a function of implant dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth profiling have been used to characterize the implants. Our microstructural observations are correlated both with the theoretical implant profiles and with the measured photoconductivity of the material.

Original language	English (US)
Pages (from-to)	1131-1145
Number of pages	15
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	73
Issue number	4
DOIs	https://doi.org/10.1080/01418619608243709
State	Published - Apr 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Materials Science
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Metals and Alloys

Online availability

10.1080/01418619608243709

Library availability

Discover UIUC Full Text

Cite this

@article{46bf8c374cd04f5c975b24ccf8700740,

title = "The effects of ion implantation on the microstructure of CuInSe2 single crystals",

abstract = "The implantation of single-crystal CuInSe2 with O ions is known to cause an n-to p-type carrier conversion and a strong enhancement in photoconductive response. In this paper, we present the first microstructural investigation of O and Xe ion implant damage in CuInSe2 as a function of implant dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth profiling have been used to characterize the implants. Our microstructural observations are correlated both with the theoretical implant profiles and with the measured photoconductivity of the material.",

author = "Mullan, {C. A.} and Kiely, {C. J.} and Yakushev, {M. V.} and M. Imanieh and Tomlinson, {R. D.} and A. Rockett",

note = "Funding Information: ACKNOWLEDGMENTS The authors wish to thank the Engineering and Physical Science Research Council, the National Renewable Energy Laboratory and Electric Power Research Institute for financial support during the course of this project. Useful technical discussions with Dr R. D. Pilkington, Dr A. E. Hill and Dr A. Burrows arc also gratefully acknowledged.",

year = "1996",

month = apr,

doi = "10.1080/01418619608243709",

language = "English (US)",

volume = "73",

pages = "1131--1145",

journal = "Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties",

issn = "0141-8610",

publisher = "Taylor and Francis Ltd.",

number = "4",

}

TY - JOUR

T1 - The effects of ion implantation on the microstructure of CuInSe2 single crystals

AU - Mullan, C. A.

AU - Kiely, C. J.

AU - Yakushev, M. V.

AU - Imanieh, M.

AU - Tomlinson, R. D.

AU - Rockett, A.

N1 - Funding Information: ACKNOWLEDGMENTS The authors wish to thank the Engineering and Physical Science Research Council, the National Renewable Energy Laboratory and Electric Power Research Institute for financial support during the course of this project. Useful technical discussions with Dr R. D. Pilkington, Dr A. E. Hill and Dr A. Burrows arc also gratefully acknowledged.

PY - 1996/4

Y1 - 1996/4

N2 - The implantation of single-crystal CuInSe2 with O ions is known to cause an n-to p-type carrier conversion and a strong enhancement in photoconductive response. In this paper, we present the first microstructural investigation of O and Xe ion implant damage in CuInSe2 as a function of implant dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth profiling have been used to characterize the implants. Our microstructural observations are correlated both with the theoretical implant profiles and with the measured photoconductivity of the material.

AB - The implantation of single-crystal CuInSe2 with O ions is known to cause an n-to p-type carrier conversion and a strong enhancement in photoconductive response. In this paper, we present the first microstructural investigation of O and Xe ion implant damage in CuInSe2 as a function of implant dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth profiling have been used to characterize the implants. Our microstructural observations are correlated both with the theoretical implant profiles and with the measured photoconductivity of the material.

UR - http://www.scopus.com/inward/record.url?scp=0030115406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030115406&partnerID=8YFLogxK

U2 - 10.1080/01418619608243709

DO - 10.1080/01418619608243709

M3 - Article

AN - SCOPUS:0030115406

SN - 0141-8610

VL - 73

SP - 1131

EP - 1145

JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

IS - 4

ER -