The effects of ion implantation on the microstructure of CuInSe2 single crystals

C. A. Mullan, C. J. Kiely, M. V. Yakushev, M. Imanieh, R. D. Tomlinson, A. Rockett

Research output: Contribution to journalArticlepeer-review


The implantation of single-crystal CuInSe2 with O ions is known to cause an n-to p-type carrier conversion and a strong enhancement in photoconductive response. In this paper, we present the first microstructural investigation of O and Xe ion implant damage in CuInSe2 as a function of implant dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth profiling have been used to characterize the implants. Our microstructural observations are correlated both with the theoretical implant profiles and with the measured photoconductivity of the material.

Original languageEnglish (US)
Pages (from-to)1131-1145
Number of pages15
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number4
StatePublished - Apr 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Materials Science
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys


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