The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs

W. McMahon, K. Matsuda, J. Lee, K. Hess, Joseph W Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An isotope effect in the slope of the substrate cu rent versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.

Original languageEnglish (US)
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages576-579
Number of pages4
StatePublished - Dec 1 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Other

Other2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

Keywords

  • Deuterium
  • Interface state generation
  • Lifetime extrapolation

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs'. Together they form a unique fingerprint.

Cite this