@inproceedings{a8e887eaa8c94af19390be1498d29f37,
title = "The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs",
abstract = "An isotope effect in the slope of the substrate cu rent versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.",
keywords = "Deuterium, Interface state generation, Lifetime extrapolation",
author = "W. McMahon and K. Matsuda and J. Lee and K. Hess and J. Lyding",
year = "2002",
language = "English (US)",
isbn = "0970827571",
series = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
pages = "576--579",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
note = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 ; Conference date: 21-04-2002 Through 25-04-2002",
}