The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces

Osman El-Atwani; J. P. Allain; Anastassiya Suslova

doi:10.1063/1.4772980

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces

Osman El-Atwani, J. P. Allain, Anastassiya Suslova

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Abstract

We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 10¹⁵-1 × 10¹⁶ cm ^-2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga₂O₃ fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

Original language	English (US)
Article number	251606
Journal	Applied Physics Letters
Volume	101
Issue number	25
DOIs	https://doi.org/10.1063/1.4772980
State	Published - Dec 17 2012
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.4772980

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title = "The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces",

abstract = "We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on {"}oxide free{"} samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.",

author = "Osman El-Atwani and Allain, {J. P.} and Anastassiya Suslova",

note = "Funding Information: This work was supported in part by the Department of Energy's 2010 Early Career Award DE-SC0004032 and the Paul Zmola award grant at Purdue University.",

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AU - El-Atwani, Osman

AU - Allain, J. P.

AU - Suslova, Anastassiya

N1 - Funding Information: This work was supported in part by the Department of Energy's 2010 Early Career Award DE-SC0004032 and the Paul Zmola award grant at Purdue University.

PY - 2012/12/17

Y1 - 2012/12/17

N2 - We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

AB - We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

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The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces

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