Abstract
We report the results of relative intensity noise (RIN) measurement on the ground and first excited state transitions of a single quantum-well (QW) transistor laser (TL). Because of higher differential gain and faster recombination lifetime on the first excited state transition, a lower laser RIN is measured as compared with ground state laser operation. The minority carrier density in the base of QWTL extracted from the laser RIN shows a carrier density of 2.6-3.5 × 1016 cm-3, a more than 40× reduction from that of a conventional diode laser.
Original language | English (US) |
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Article number | 081103 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 8 |
DOIs | |
State | Published - Feb 25 2013 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)