The effect of ground and first excited state transitions on transistor laser relative intensity noise

F. Tan, W. Xu, X. Huang, M. Feng, N. Holonyak

Research output: Contribution to journalArticle

Abstract

We report the results of relative intensity noise (RIN) measurement on the ground and first excited state transitions of a single quantum-well (QW) transistor laser (TL). Because of higher differential gain and faster recombination lifetime on the first excited state transition, a lower laser RIN is measured as compared with ground state laser operation. The minority carrier density in the base of QWTL extracted from the laser RIN shows a carrier density of 2.6-3.5 × 1016 cm-3, a more than 40× reduction from that of a conventional diode laser.

Original languageEnglish (US)
Article number081103
JournalApplied Physics Letters
Volume102
Issue number8
DOIs
StatePublished - Feb 25 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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