We report the results of relative intensity noise (RIN) measurement on the ground and first excited state transitions of a single quantum-well (QW) transistor laser (TL). Because of higher differential gain and faster recombination lifetime on the first excited state transition, a lower laser RIN is measured as compared with ground state laser operation. The minority carrier density in the base of QWTL extracted from the laser RIN shows a carrier density of 2.6-3.5 × 1016 cm-3, a more than 40× reduction from that of a conventional diode laser.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)