The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods

Nishshanka N. Hewa-Kasakarage, Patrick Z. El-Khoury, Nickolas Schmall, Maria Kirsanova, Alexander Nemchinov, Alexander N. Tarnovsky, Alexey Bezryadin, Mikhail Zamkov

Research output: Contribution to journalArticle

Abstract

The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods has been investigated using picosecond transient absorption spectroscopy. The spatial separation of an excited electron-hole pair was estimated from the redshift in band edge absorption corresponding to the decrease in the exciton binding energy. The present study identifies a considerable effect of the solvent polarity on the rate of charge separation in semiconductor heterostructures, which should be taken into account when selecting nanorod caging media, such as solvents or polymer matrices.

Original languageEnglish (US)
Article number133113
JournalApplied Physics Letters
Volume94
Issue number13
DOIs
StatePublished - Apr 15 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods'. Together they form a unique fingerprint.

  • Cite this

    Hewa-Kasakarage, N. N., El-Khoury, P. Z., Schmall, N., Kirsanova, M., Nemchinov, A., Tarnovsky, A. N., Bezryadin, A., & Zamkov, M. (2009). The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods. Applied Physics Letters, 94(13), [133113]. https://doi.org/10.1063/1.3114464