@article{fb9269df62ec40adb457601c221d03af,
title = "The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors",
abstract = "-We have investigated the effect of deuterium sintering for reliability lifetime improvement of CMOS transistors with nitride sidewall spacers. SIMS measurements show that lifetime improvements of wafers with deuterium sintering at the Metal-1 and Metal-4 steps are directly related to the deuterium incorporation at the SiC>2/Si interface.",
keywords = "CMOS, Deuterium, Hot-carrier, Reliability",
author = "Jinju Lee and Yefim Epstein and Berti, {Antonio C.} and John Huber and Karl Hess and Lyding, {Joseph W.}",
note = "Funding Information: Manuscript received August 10, 1998; revised March 1, 1999. This work was supported by the Office of Naval Research under Grants N00014-92-J-1519 and N00014-98-I-0604 and by the Beckman Institute for Advanced Science and Technology at the University of Illinois. The use of the SIMS facility, which was supported by the U.S. Department of Energy, is gratefully acknowledged. The review of this brief was arranged by Editor K. Shenai.",
year = "1999",
doi = "10.1109/16.777177",
language = "English (US)",
volume = "46",
pages = "1812--1813",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}