The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors

Jinju Lee, Yefim Epstein, Antonio C. Berti, John Huber, Karl Hess, Joseph W. Lyding

Research output: Contribution to journalArticle


-We have investigated the effect of deuterium sintering for reliability lifetime improvement of CMOS transistors with nitride sidewall spacers. SIMS measurements show that lifetime improvements of wafers with deuterium sintering at the Metal-1 and Metal-4 steps are directly related to the deuterium incorporation at the SiC>2/Si interface.

Original languageEnglish (US)
Pages (from-to)1812-1813
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - Dec 1 1999



  • CMOS
  • Deuterium
  • Hot-carrier
  • Reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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