The effect of cross-sectional geometry on ZT enhancement in rough silicon nanostructures

Jyothi Sadhu, Marc Ghossoub, Sanjiv Sinha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dramatic reduction in the thermal conductivity of rough silicon nanowires is due to phonon localization in the wire resulting from multiple scattering of phonons from the rough walls. We report the dependence of thermal conductivity of the nanowires as a function of the surface roughness and the diameter of the wire by modeling the nanowire as a waveguide. In addition, we estimate the impact of boundary condition, dimensionality and cross section of rough wire on the thermal conductivity. This theoretical model gives insights for tailoring thermal conductivity and enhancing the ZT of silicon to 1 for its use in thermoelectrics.

Original languageEnglish (US)
Title of host publicationThermoelectric Materials 2010 - Growth, Properties, Novel Characterization Methods and Applications
PublisherMaterials Research Society
Pages253-258
Number of pages6
ISBN (Print)9781605112442
DOIs
StatePublished - Jan 1 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1267
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Sadhu, J., Ghossoub, M., & Sinha, S. (2010). The effect of cross-sectional geometry on ZT enhancement in rough silicon nanostructures. In Thermoelectric Materials 2010 - Growth, Properties, Novel Characterization Methods and Applications (pp. 253-258). (Materials Research Society Symposium Proceedings; Vol. 1267). Materials Research Society. https://doi.org/10.1557/proc-1267-dd09-08