The development of a symbolically defined large signal InP/GaAsSb type-II DHBT model for 200 GHz mixed signal circuit simulation

Mark Stuenkel, Yu Ju Chuang, Kurt Cimino, William Snodgrass, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A large signal device model is developed for type-II InP/GaAsSb/InP devices that is based on the UIUC Type-I SDD model. The model accurately characterizes a balanced 480/420 GHz fT/fMAX device, and is used to design and simulate a 200 GHz static frequency divider.

Original languageEnglish (US)
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
StatePublished - Dec 1 2008
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Other

Other23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Country/TerritoryUnited States
CityChicago, IL
Period4/14/084/17/08

Keywords

  • Double heterojunction bipolar transistor type-II
  • Mixed signal circuits

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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