Abstract
A large signal device model is developed for type-II InP/GaAsSb/InP devices that is based on the UIUC Type-I SDD model. The model accurately characterizes a balanced 480/420 GHz fT/fMAX device, and is used to design and simulate a 200 GHz static frequency divider.
Original language | English (US) |
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Title of host publication | 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 |
State | Published - 2008 |
Event | 23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States Duration: Apr 14 2008 → Apr 17 2008 |
Publication series
Name | 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 |
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Other
Other | 23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 |
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Country/Territory | United States |
City | Chicago, IL |
Period | 4/14/08 → 4/17/08 |
Keywords
- Double heterojunction bipolar transistor type-II
- Mixed signal circuits
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering