Texture and crystallinity development in ultra-thin HfO2 films studied by electron microscopy

Fakhruddin Bohra; Bin Jiang; Jian Min Zuo

Texture and crystallinity development in ultra-thin HfO₂ films studied by electron microscopy

Fakhruddin Bohra, Bin Jiang, Jian Min Zuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We show evidence of texture and crystallinity in ultra-thin HfO₂ films by high-resolution electron microscopy and diffraction as an effect of rapid thermal annealing. The films grown by atomic layer deposition have a 1 nm SiO₂ transition layer between Si and the HfO₂ layer. The amorphous structure of the as-deposited films is retained after annealing at 600 DC, while the films crystallize into an orthorhombic phase with texture after annealing at 800 DC or higher. In contrast, films grown on thick amorphous SiO₂ substrates crystallize without any texture. We attribute the texture of HfO₂ on Si(100) to the role of interfacial SiO₂ transition layer. The 600 DC annealed amorphous films were found to have some medium range order as detected by fluctuation electron microscopy that relates to the initiation of the crystallization process

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages	58-63
Number of pages	6
State	Published - 2007
Event	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2007 → Apr 13 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	996
ISSN (Print)	0272-9172

Other

Other	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/9/07 → 4/13/07

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Texture and crystallinity development in ultra-thin HfO₂ films studied by electron microscopy. / Bohra, Fakhruddin; Jiang, Bin; Zuo, Jian Min.
Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. p. 58-63 (Materials Research Society Symposium Proceedings; Vol. 996).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bohra, F, Jiang, B & Zuo, JM 2007, Texture and crystallinity development in ultra-thin HfO₂ films studied by electron microscopy. in Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. Materials Research Society Symposium Proceedings, vol. 996, pp. 58-63, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.

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abstract = "We show evidence of texture and crystallinity in ultra-thin HfO2 films by high-resolution electron microscopy and diffraction as an effect of rapid thermal annealing. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between Si and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600 DC, while the films crystallize into an orthorhombic phase with texture after annealing at 800 DC or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. We attribute the texture of HfO2 on Si(100) to the role of interfacial SiO2 transition layer. The 600 DC annealed amorphous films were found to have some medium range order as detected by fluctuation electron microscopy that relates to the initiation of the crystallization process",

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N2 - We show evidence of texture and crystallinity in ultra-thin HfO2 films by high-resolution electron microscopy and diffraction as an effect of rapid thermal annealing. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between Si and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600 DC, while the films crystallize into an orthorhombic phase with texture after annealing at 800 DC or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. We attribute the texture of HfO2 on Si(100) to the role of interfacial SiO2 transition layer. The 600 DC annealed amorphous films were found to have some medium range order as detected by fluctuation electron microscopy that relates to the initiation of the crystallization process

AB - We show evidence of texture and crystallinity in ultra-thin HfO2 films by high-resolution electron microscopy and diffraction as an effect of rapid thermal annealing. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between Si and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600 DC, while the films crystallize into an orthorhombic phase with texture after annealing at 800 DC or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. We attribute the texture of HfO2 on Si(100) to the role of interfacial SiO2 transition layer. The 600 DC annealed amorphous films were found to have some medium range order as detected by fluctuation electron microscopy that relates to the initiation of the crystallization process

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