Texture and crystallinity development in ultra-thin HfO2 films studied by electron microscopy

Fakhruddin Bohra, Bin Jiang, Jian-Min Zuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show evidence of texture and crystallinity in ultra-thin HfO2 films by high-resolution electron microscopy and diffraction as an effect of rapid thermal annealing. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between Si and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600 DC, while the films crystallize into an orthorhombic phase with texture after annealing at 800 DC or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. We attribute the texture of HfO2 on Si(100) to the role of interfacial SiO2 transition layer. The 600 DC annealed amorphous films were found to have some medium range order as detected by fluctuation electron microscopy that relates to the initiation of the crystallization process

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages58-63
Number of pages6
StatePublished - Dec 1 2007
EventCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume996
ISSN (Print)0272-9172

Other

OtherCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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