Tensile strained island growth at step-edges on GaAs(110)

P. J. Simmonds, M. L. Lee

Research output: Contribution to journalArticlepeer-review

Abstract

We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain.

Original languageEnglish (US)
Article number153101
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
StatePublished - Oct 11 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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