Tensile strained island growth at step-edges on GaAs(110)

P. J. Simmonds; M. L. Lee

doi:10.1063/1.3498676

Tensile strained island growth at step-edges on GaAs(110)

P. J. Simmonds, M. L. Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain.

Original language	English (US)
Article number	153101
Journal	Applied Physics Letters
Volume	97
Issue number	15
DOIs	https://doi.org/10.1063/1.3498676
State	Published - Oct 11 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3498676

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abstract = "We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain.",

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AB - We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain.

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Tensile strained island growth at step-edges on GaAs(110)

Abstract

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