Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Christopher D. Yerino, Paul J. Simmonds, Baolai Liang, Vitaliy G. Dorogan, Morgan E. Ware, Yuriy I. Mazur, Daehwan Jung, Diana L. Huffaker, Gregory J. Salamo, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110- 240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities for engineering the band alignment, band structure, and optical properties of epitaxial nanostructures.

Original languageEnglish (US)
Article number071912
JournalApplied Physics Letters
Volume105
Issue number7
DOIs
StatePublished - Aug 18 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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