Temperature-dependent surface diffusion parameters on amorphous materials

D. Llera-Hurlburt, A. S. Dalton, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


Diffusion on amorphous surfaces represents a little-studied physical phenomenon that controls several important kinds of material processing. To elucidate some general features of this phenomenon, we obtain Arrhenius parameters for the surface self-diffusion of amorphous silicon by measuring the formation kinetics of hemispherical grained silicon. Comparison with literature results suggests the existence of a significant temperature dependence in the activation energy and pre-exponential factor for total mass transport. We develop a physical model to show that this behavior should characterize diffusion on amorphous surfaces in general.

Original languageEnglish (US)
Pages (from-to)244-252
Number of pages9
JournalSurface Science
StatePublished - Apr 20 2002


  • Amorphous surfaces
  • Computer simulations
  • Diffusion and migration
  • Models of surface kinetics
  • Silicon
  • Surface diffusion

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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