@inproceedings{9fb8c18d8716419fb2b8f0e3c5aa1b4e,
title = "Temperature dependent mechanical properties of doped silicon microcamtilevers",
abstract = "This paper reports temperature dependent resonance frequency and quality factor of microcantilevers over the temperature range 25 - 175 °C. Either local heating from integrated solid state resistors or uniform heating on a hotplate were employed. The microcantilevers were made of either boron-doped or phosphorus-doped single crystalline silicon. Both cantilever types showed decreasing resonant frequency with increasing temperature, and the cantilever mechanical quality factor was not a function of temperature over the temperature range tested. The presence of a silicon dioxide layer adjacent to the cantilever can affect the cantilever mechanical response, and so care must be taken to eliminate this layer.",
keywords = "Microcantilever, Quality factor, Resonance frequency, Stress, Temperature",
author = "J. Lee and Goericke, {F. T.} and King, {W. P.}",
year = "2007",
doi = "10.1109/SENSOR.2007.4300202",
language = "English (US)",
isbn = "1424408423",
series = "TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems",
pages = "603--606",
booktitle = "TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems",
note = "4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 ; Conference date: 10-06-2007 Through 14-06-2007",
}