Abstract

This paper reports temperature dependent resonance frequency and quality factor of microcantilevers over the temperature range 25 - 175 °C. Either local heating from integrated solid state resistors or uniform heating on a hotplate were employed. The microcantilevers were made of either boron-doped or phosphorus-doped single crystalline silicon. Both cantilever types showed decreasing resonant frequency with increasing temperature, and the cantilever mechanical quality factor was not a function of temperature over the temperature range tested. The presence of a silicon dioxide layer adjacent to the cantilever can affect the cantilever mechanical response, and so care must be taken to eliminate this layer.

Original languageEnglish (US)
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages603-606
Number of pages4
DOIs
StatePublished - Dec 1 2007
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: Jun 10 2007Jun 14 2007

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
CountryFrance
CityLyon
Period6/10/076/14/07

Keywords

  • Microcantilever
  • Quality factor
  • Resonance frequency
  • Stress
  • Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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