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Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures

  • Aadil Waseem
  • , Clarence Chan
  • , Xihang Wu
  • , Yujie Liu
  • , Yifan Shen
  • , Manos Kapritsos
  • , Theodore B. Norris
  • , Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To enhance solar photo absorption of III-N semiconductors, we demonstrate Arsenic implantation at elevated temperatures, improving doping activation and reducing crystal damage.

Original languageEnglish (US)
Title of host publication2024 Conference on Lasers and Electro-Optics, CLEO 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781957171395
DOIs
StatePublished - 2024
Externally publishedYes
Event2024 Conference on Lasers and Electro-Optics, CLEO 2024 - Charlotte, United States
Duration: May 7 2024May 10 2024

Publication series

Name2024 Conference on Lasers and Electro-Optics, CLEO 2024

Conference

Conference2024 Conference on Lasers and Electro-Optics, CLEO 2024
Country/TerritoryUnited States
CityCharlotte
Period5/7/245/10/24

Keywords

  • Arsenic
  • Crystals
  • Doping profiles
  • Electro-optic effects
  • Impurities
  • Lattices
  • Metals
  • Nanostructures
  • Photonic band gap
  • Temperature dependence

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Computer Networks and Communications
  • Civil and Structural Engineering
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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