Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures

Aadil Waseem; Clarence Chan; Xihang Wu; Yujie Liu; Yifan Shen; Manos Kapritsos; Theodore B. Norris; Xiuling Li

Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures

Aadil Waseem, Clarence Chan, Xihang Wu, Yujie Liu, Yifan Shen, Manos Kapritsos, Theodore B. Norris, Xiuling Li

Research output: Contribution to conference › Paper › peer-review

Abstract

To enhance solar photo absorption of III-N semiconductors, we demonstrate Arsenic implantation at elevated temperatures, improving doping activation and reducing crystal damage.

Original language	English (US)
State	Published - 2024
Externally published	Yes
Event	CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics - Charlotte, United States Duration: May 5 2024 → May 10 2024

Conference

Conference	CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics
Country/Territory	United States
City	Charlotte
Period	5/5/24 → 5/10/24

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Computer Science
Space and Planetary Science
Control and Systems Engineering
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

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Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures. / Waseem, Aadil; Chan, Clarence; Wu, Xihang et al.
2024. Paper presented at CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics, Charlotte, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures",

abstract = "To enhance solar photo absorption of III-N semiconductors, we demonstrate Arsenic implantation at elevated temperatures, improving doping activation and reducing crystal damage.",

author = "Aadil Waseem and Clarence Chan and Xihang Wu and Yujie Liu and Yifan Shen and Manos Kapritsos and Norris, {Theodore B.} and Xiuling Li",

note = "This work was supported in part by United States Army Research Office Award No. W911NF2110337.; CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics ; Conference date: 05-05-2024 Through 10-05-2024",

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language = "English (US)",

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T1 - Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures

AU - Waseem, Aadil

AU - Chan, Clarence

AU - Wu, Xihang

AU - Liu, Yujie

AU - Shen, Yifan

AU - Kapritsos, Manos

AU - Norris, Theodore B.

AU - Li, Xiuling

N1 - This work was supported in part by United States Army Research Office Award No. W911NF2110337.

PY - 2024

Y1 - 2024

N2 - To enhance solar photo absorption of III-N semiconductors, we demonstrate Arsenic implantation at elevated temperatures, improving doping activation and reducing crystal damage.

AB - To enhance solar photo absorption of III-N semiconductors, we demonstrate Arsenic implantation at elevated temperatures, improving doping activation and reducing crystal damage.

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UR - http://www.scopus.com/inward/citedby.url?scp=85205120266&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85205120266

T2 - CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

Y2 - 5 May 2024 through 10 May 2024

ER -

Temperature dependent implantation of As-Isoelectronic Impurity in GaN Micro and Nanostructures

Abstract

Conference

ASJC Scopus subject areas

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