Temperature-dependent energy thresholds for ion-stimulated defect formation in solids

Recent simulations and experiments have hinted that the solid temperature may affect the dynamics of defect formation when the energies of bombarding ions fall below about 100 eV. The present work offers direct experimental confirmation of this phenomenon through measurements of the energy thresholds for ion-enhanced surface diffusion of indium on silicon and germanium, where transport rates depend upon surface defect formation. Such temperature-dependent energy thresholds may offer a new means for modulating sputtering and defect formation in a variety of ion processing applications.