Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: Effects of ion mass and adsorbate-substrate pairing

Zhengguang Wang, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

Recent simulations and experiments have indicated that solid temperature affects the dynamics of defect formation when the energies of bombarding ions fall below about 100 eV. The physical picture formulated for this phenomenon predicts that ion mass should exert only a weak influence on the threshold energy for defect formation. The present work experimentally confirms that prediction through mesoscale surface diffusion measurements of Ge on Si(1 1 1) as a marker for ion-induced defect behavior. Furthermore, comparisons between the results and those already obtained for In on Si(1 1 1) and Ge(1 1 1) show that the magnitude of the variation in threshold energy with temperature (∼0.1 eV/K) is largely independent of the adsorbate-substrate pairing. The present results give further evidence for the existence of a broad class of temperature-dependent ion-induced defect formation processes.

Original languageEnglish (US)
Pages (from-to)2453-2458
Number of pages6
JournalSurface Science
Volume601
Issue number12
DOIs
StatePublished - Jun 15 2007

Keywords

  • Diffusion
  • Interactions of atoms and molecules with surfaces
  • Ion radiation effects
  • Semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: Effects of ion mass and adsorbate-substrate pairing'. Together they form a unique fingerprint.

  • Cite this