Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

J. J. Huang, Michael Hattendorf, Milton Feng, D. J.H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, R. D. Dupuis

Research output: Contribution to journalArticle

Abstract

We have demonstrated state-of-the-art performance of AlGaN/GaN heterojuction bipolar transistors (HBTs) with a common emitter (CE) current gain of 31 at 175K and 11.3 at 295K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base-emitter interface recombination current. We also observed an increase of collector-emitter offset voltage with the decrease of temperature. The increase of V CEOFF at lower temperature is related to an increase of V BE as the base bulk current is increased, or to the reduction of the ideality factor n BE.

Original languageEnglish (US)
Pages (from-to)157-159
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number4
DOIs
StatePublished - Apr 1 2001

Keywords

  • Common emitter current gain
  • Heterojunction bipolar transistor
  • Offset voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Huang, J. J., Hattendorf, M., Feng, M., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Chowdhury, U., Zhu, T. G., Kwon, H. K., & Dupuis, R. D. (2001). Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors. IEEE Electron Device Letters, 22(4), 157-159. https://doi.org/10.1109/55.915594