Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch

Zhongjie Ren, Hsien Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Waseem, A. F.M.Anhar Uddin Bhuiyan, Hongping Zhao, Wenjuan Zhu, Xiuling Li

Research output: Contribution to journalArticlepeer-review

Abstract

Understanding the thermal stability and degradation mechanism of β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial for their high-power electronics applications. This work examines the high temperature performance of the junctionless lateral β-Ga2O3 FinFET grown on a native β-Ga2O3 substrate, fabricated by metal-assisted chemical etching with Al2O3 gate oxide and Ti/Au gate metal. The thermal exposure effect on threshold voltage (Vth), subthreshold swing (SS), hysteresis, and specific on-resistance (Ron,sp), as a function of temperature up to 298 °C, is measured and analyzed. SS and Ron,sp increased with increasing temperatures, similar to the planar MOSFETs, while a more severe negative shift of Vth was observed for the high aspect-ratio FinFETs here. Despite employing a much thicker epilayer (∼2 μm) for the channel, the high temperature performance of Ion/Ioff ratios and SS of the FinFET in this work remains comparable to that of the planar β-Ga2O3 MOSFETs reported using epilayers ∼10-30× thinner. This work paves the way for further investigation into the stability and promise of β-Ga2O3 FinFETs compared to their planar counterparts.

Original languageEnglish (US)
Article number043505
JournalApplied Physics Letters
Volume123
Issue number4
DOIs
StatePublished - Jul 24 2023
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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