Temperature-Dependent Characteristics and Single-Mode Performance of AlGaInP-Based 670-690-nm Vertical-Cavity Surface-Emitting Lasers

M. Hagerott Crawford; R. P. Schneider; K. D. Choquette; K. L. Lear

doi:10.1109/68.393186

Temperature-Dependent Characteristics and Single-Mode Performance of AlGaInP-Based 670-690-nm Vertical-Cavity Surface-Emitting Lasers

M. Hagerott Crawford, R. P. Schneider, K. D. Choquette, K. L. Lear

Research output: Contribution to journal › Article › peer-review

Abstract

We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50C from a 15-µm-diameter device.

Original language	English (US)
Pages (from-to)	724-726
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1109/68.393186
State	Published - Jul 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.393186

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title = "Temperature-Dependent Characteristics and Single-Mode Performance of AlGaInP-Based 670-690-nm Vertical-Cavity Surface-Emitting Lasers",

abstract = "We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50C from a 15-µm-diameter device.",

author = "Crawford, {M. Hagerott} and Schneider, {R. P.} and Choquette, {K. D.} and Lear, {K. L.}",

note = "Funding Information: Manuscript received March 8, 1995. This letter was supported by the us Department of Energy under contract no. DE-AC04-94AL85000. The authors are with the Sandia National Laboratories, Albuquerque, NM 87185-0603 USA. IEEE Log Number 9412169.",

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language = "English (US)",

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AU - Crawford, M. Hagerott

AU - Schneider, R. P.

AU - Choquette, K. D.

AU - Lear, K. L.

N1 - Funding Information: Manuscript received March 8, 1995. This letter was supported by the us Department of Energy under contract no. DE-AC04-94AL85000. The authors are with the Sandia National Laboratories, Albuquerque, NM 87185-0603 USA. IEEE Log Number 9412169.

PY - 1995/7

Y1 - 1995/7

N2 - We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50C from a 15-µm-diameter device.

AB - We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50C from a 15-µm-diameter device.

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Temperature-Dependent Characteristics and Single-Mode Performance of AlGaInP-Based 670-690-nm Vertical-Cavity Surface-Emitting Lasers

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