Temperature-Dependent Bit-Error-Rate Characterization of Ultralow-Noise GaAs MESFET’s for 3-Gb/s Operation

Joy Laskar, Milton Feng, Jay Kruse

Research output: Contribution to journalArticlepeer-review

Abstract

Noise generated in a system establishes the fundamental limitation on the performance of all communication systems and can be characterized with both minimum noise figure (NFmin) and bit error rate (BER). The development of data processing and transmission into the gigabit / second range requires a detailed understanding of the correlation between NFmin and BER. We report on the first cryogenic microwave measurements of NFmin, current gain cutoff frequency (Ft), and BER at 3 Gb/s of 0.6-μm GaAs MESFET’s. The noise characterization of GaAs-based MESFET deveices and circuits is significant because GaAs-based MESFET’s are clearly the key industry device for both digital and analog applications.

Original languageEnglish (US)
Pages (from-to)57-59
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number2
DOIs
StatePublished - Feb 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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