Temperature-Dependent Bit-Error-Rate Characterization of Ultralow-Noise GaAs MESFET’s for 3-Gb/s Operation

Joy Laskar; Milton Feng; Jay Kruse

doi:10.1109/55.215107

Temperature-Dependent Bit-Error-Rate Characterization of Ultralow-Noise GaAs MESFET’s for 3-Gb/s Operation

Joy Laskar, Milton Feng, Jay Kruse

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Noise generated in a system establishes the fundamental limitation on the performance of all communication systems and can be characterized with both minimum noise figure (NF_min) and bit error rate (BER). The development of data processing and transmission into the gigabit / second range requires a detailed understanding of the correlation between NF_min and BER. We report on the first cryogenic microwave measurements of NF_min, current gain cutoff frequency (F_t), and BER at 3 Gb/s of 0.6-μm GaAs MESFET’s. The noise characterization of GaAs-based MESFET deveices and circuits is significant because GaAs-based MESFET’s are clearly the key industry device for both digital and analog applications.

Original language	English (US)
Pages (from-to)	57-59
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1109/55.215107
State	Published - Feb 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Temperature-Dependent Bit-Error-Rate Characterization of Ultralow-Noise GaAs MESFET{\textquoteright}s for 3-Gb/s Operation",

abstract = "Noise generated in a system establishes the fundamental limitation on the performance of all communication systems and can be characterized with both minimum noise figure (NFmin) and bit error rate (BER). The development of data processing and transmission into the gigabit / second range requires a detailed understanding of the correlation between NFmin and BER. We report on the first cryogenic microwave measurements of NFmin, current gain cutoff frequency (Ft), and BER at 3 Gb/s of 0.6-μm GaAs MESFET{\textquoteright}s. The noise characterization of GaAs-based MESFET deveices and circuits is significant because GaAs-based MESFET{\textquoteright}s are clearly the key industry device for both digital and analog applications.",

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