Temperature Dependence Study of Two-Dimensional Electron Gas Effect on the Noise Performance of High Frequency Field Effect Transistors

M. Feng, D. Scherrer, J. Kruse, P. J. Apostolakis, J. R. Middleton

Research output: Contribution to journalArticlepeer-review

Abstract

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT‘s clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT‘s do not make a significant contribution to the noise reduction at high frequency operation of these devices.

Original languageEnglish (US)
Pages (from-to)139-141
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number4
DOIs
StatePublished - Apr 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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